Hierarchical approach to "atomistic" 3-D MOSFET simulation
نویسندگان
چکیده
We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1m MOSFET’s. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional driftdiffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.
منابع مشابه
A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...
متن کاملIntegrated Atomistic Process and Device Simulation of Decananometre MOSFETs
In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomist...
متن کاملStatistical 3D ‘atomistic’ simulation of decanano MOSFETs
A 3D statistical ‘atomistic’ simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the ‘atomistic’ simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architec...
متن کاملRandom Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 /spl mu/m MOSFET~s: A 3 - Electron Devices, IEEE Transactions on
A three-dimensional (3-D) “atomistic” simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 m MOSFET’s is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single mul...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 18 شماره
صفحات -
تاریخ انتشار 1999